2SB676 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

MFG CO.

2SB676

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB676

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0

VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA

VBEsat

Base-emitter saturation voltage

IC=-3A ,IB=-6mA

ICBO

Collector cut-off current

VCB=-100V, IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-3A ; VCE=-2V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

VCE=-30V, IB1=-IB2=-6mA

RL=10@

MIN TYP. MAX UNIT

-80

V

-1.5

V

-2.0

V

-20 µA

-2.5 mA

2000

1000

0.15

µs

0.80

µs

0.40

µs

2

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