2SB449 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

MFG CO.

2SB449

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB449

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBEsat

Base-emitter saturation voltage

IC=-3A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-2V

MIN TYP. MAX UNIT

-50

V

-50

V

-7

V

-0.7

V

-1.2

V

-10 µA

-10 µA

20

85

2

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