2SB1198L-R-AE3-R(2011) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2SB1198L-R-AE3-R Datasheet PDF : 4 Pages
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2SB1198
TYPICAL CHARACTERISTICS
-10
-5
-2
-1
-500m
-200m
-100m
-50m
Figure 1. Grounded Emitter
Propagation Characteristics
Ta=100℃
VCE = -3V
Ta=25℃
Ta= -25℃
-20m
-10m
-5m
-2m
-1m
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE (V)
PNP EPITAXIAL SILICON TRANSISTOR
Figure 2. Grounded Emitter
Output Characteristics
-0.5 Ta=25℃
-5.0mA
-45mA
-0.4
-40mA
-35mA
-30mA
-0.3
-25mA
-20mA
-1.5mA
-1.0mA
-0.2
-0.5mA
-0.1
0
IB =0mA
0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector To Emitter Voltage, VCE (V)
Figure 5. Collector-emitter Saturation
Voltage vs. Collector Current (II)
-2
IC/IB=10
-1
-500m
-200m
-100m
-50m
Ta= 100℃
Ta= 25℃
Ta= -25℃
-20m
-10m
-1
-10
-100
-1A
Collector Current, IC (mA)
Figure 6. Collector-Emitter Saturation
Voltage vs. Collector Current (III)
-2
IC/IB=20
-1
-500m
-200m
-100m
-50m
Ta= 100℃
Ta= 25℃
Ta= -25℃
-20m
-10m
-1
-10
-100
-1A
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-040,B
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