MGFS45V2735 View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
MFG CO.
MGFS45V2735 Datasheet PDF : 3 Pages
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TYPICAL CHARACTERISTICS
47
VDS=10V
ID=8A
46
P1dB,GLP vs. f
P1dB
45
44
43
GLP
42
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2735
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
Po,P.A.E. vs. Pin
22
50
11101 0
VDS=10V
ID=8A
20
f=3.1GHz
45
80
18
Po
40
60
16
35
40
14
P.A.E.
30
20
12
41
10
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
FREQUENCY f (GHz)
Po,IM3 vs. Pin
42
20
VDS=10V
IDS=8A
40 f=3.5GHz
10
Delta f=10MHz
38
2-tone test
Po
0
25
0
15
20
25
30
35
40
INPUT POWER Pin (dBm)
36
-10
34
-20
IM3
32
-30
30
-40
28
-50
26
18
20 22 24 26 28
INPUT POWER Pin (dBm) S.C.L.
-60
30
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
(GHz)
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
Magn.
0.63
0.58
0.51
0.47
0.47
0.50
0.51
0.49
0.45
0.48
0.64
Angle(deg)
88
47
1
-51
-105
-152
166
123
61
-11
-75
Magn.
3.39
3.90
4.30
4.52
4.51
4.33
4.15
4.04
3.92
3.60
2.86
Angle(deg)
38
3
-31
-66
-101
-135
-168
159
117
76
33
Magn.
0.03
0.04
0.05
0.06
0.06
0.06
0.05
0.06
0.06
0.06
0.05
Angle(deg)
-17
-52
-86
-122
-157
166
134
100
49
8
-40
S22
Magn. Angle(deg)
0.59
26
0.49
-1
0.41
-30
0.32
-67
0.27
-106
0.24
-137
0.23
-165
0.21
174
0.15
149
0.05
165
0.16
-115
MITSUBISHI
ELECTRIC
June-'04
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