2SA1493 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SA1493

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-10 A;IB=-1 A

ICBO

Collector cut-off current

VCB=-200V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;RL=-12Ω

IB1=-IB2=-0.5A

VCC=-60V

‹ hFE classifications

O

P

Y

50-100 70-140 90-180

Product Specification

2SA1493

MIN TYP. MAX UNIT

-200

V

-3.0

V

-100 μA

-100 μA

50

180

20

MHz

400

pF

0.30

μs

0.90

μs

0.20

μs

2

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