2SA1492 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SA1492

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1492

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB=B -0.5A

ICBO

Collector Cutoff Current

VCB= -180V ; IE=0

IEBO

Emitter Cutoff Current

VEB= -6V; IC=0

hFE

DC Current Gain

IC= -3A ; VCE= -4V

COB

Output Capacitance

IE= 0 ; VCB= -10V;f= 1.0MHz

fT

Current-Gain—Bandwidth Product

IE= 0.5A ; VCE= -12V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -10A ,RL= 4Ω,

IB1= -IB2= -1A,VCC= -40V

MIN TYP. MAX UNIT

-180

V

-2.0 V

-100 μA

-100 μA

50

180

500

pF

20

MHz

0.6

μs

0.9

μs

0.2

μs

‹ hFE Classifications

O

P

Y

50-100 70-140 90-180

isc Website：www.iscsemi.cn

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