2SA1294 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

2SA1294

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-230V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-5A ; VCE=4V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IE=2A ; VCE=-12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;RL=12Ω

IB1=-IB2=-0.5A

VCC=-60V

‹ hFE Classifications

O

Y

50-100

70-140

Product Specification

2SA1294

MIN TYP. MAX UNIT

-230

V

-2.0

V

-100 μA

-100 μA

50

140

500

pF

35

MHz

0.35

μs

1.5

μs

0.3

μs

2

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