
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-4.5A ;IB=-0.45A
VBE
Base-emitter on voltage
IC=-4.5A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
hFE -1
DC current gain
hFE -2
DC current gain
VEB=-5V; IC=0
IC=-1A ; VCE=-2V
IC=-4.5A ; VCE=-2V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-2V
hFE-1 classifications
R
Q
60-120
100-200
Product Specification
2SA1141
MIN TYP. MAX UNIT
-0.7 -1.5
V
-1.2 -2.0
V
-50
μA
-50
μA
60
200
40
390
pF
90
MHz
2