2N7002F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
2N7002F Datasheet PDF : 12 Pages
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Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
3
VGS(th)
(V)
2
1
max
typ
min
003aab101
10-3
ID
(A)
10-4
10-5
003aab100
min
typ max
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
ID = 0.25 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
ID = 0.3 A
Tj = 25 °C
VDS = 30 V
003aab359
6
4
2
0
0
0.2
0.4
0.6
0.8
QG (nC)
ID = 300 mA; VDS = 30 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Gate charge waveform definitions
2N7002F_3
Product data sheet
Rev. 03 — 28 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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