2N6259 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N6259 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE= 15-60@IC= 8A
·High Power Dissipation
: PD= 150W@ IC= 15A
APPLICATIONS
·Designed for high power audio, disk head positioners, linear
amplifiers, switching regulators,solenoid drivers,and DC-DC
converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
170
V
VCEO Collector-Emitter Voltage
150
V
VCEX Collector-Emitter Voltage
170
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
4
A
IBM
Base Current- Peak
15
A
PC
Collector Power Dissipation @TC=25℃ 150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc Product Specification
2N6259
isc Website：www.iscsemi.cn
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