2N6229 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N6229

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N6229 2N6230 2N6231

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6229

2N6230 IC=-0.2A ;IB=0

2N6231

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-2V

ICEO

Collector cut-off current

VCE=Rated VCEO; IB=0

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

2N6229

hFE

DC current gain

2N6230 IC=-5A ; VCE=-2V

2N6231

fT

Transition frequency

IC=-0.5A ; VCE=-4V

MIN TYP. MAX UNIT

-100

-120

V

-140

-1.0

V

-2.0

V

-5.0 mA

-1.0 mA

-0.1 mA

25

100

20

80

15

60

1

MHz

2

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