2N6078 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

2N6078

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

www.jmnic.com

2N6077 2N6078 2N6079

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N6077

275

VCEO(sus)

Collector-emitter

sustaining voltage

2N6078 IC=0.1A ;IB=0

250

V

2N6079

350

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

ICEO

Collector cut-off current

ICEX

Collector cut-off current

ICBO

Collector cut-off current

VCE= Rated VCEO; IB=0

VCE=Rated VCEO; VBE(off)=1.5V

TC=125℃

VCB=Rated VCBO; IE=0

1.0

V

1.2

V

2.0 mA

0.1

1.0

mA

0.1 mA

IEBO

Emitter cut-off current

VEB=6V; IC=0

1.0 mA

hFE

DC current gain

fT

Transition frequency

IC=1.2A ; VCE=1V

IC=0.5A;VCE=10V;f=1MHz

12

70

7

MHz

JMnic

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