2N5491 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N5491

Silicon NPN Power T ransistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N5491

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 40V(Min)

·Low Saturation Voltage-

: VCE (sat)= 1V(Max)@IC= 2.0A

APPLICATIONS

·Designed for a wide variety of medium-power switching and

amplifier applications , such as series and shunt regulators

and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

60

VCEV

Collector-Emitter Voltage

VBE= -1.5V

60

Collector-Emitter Voltage

VCER

RBE= 100Ω

50

VCEO Collector-Emitter Voltage

40

VEBO

Emitter-Base Voltage

5

IC

Collector Current-Continuous

7

IB

Base Current

3

Collector Power Dissipation

PC

@ Ta=25℃

Collector Power Dissipation

1.8

@ TC=25℃

50

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

V

V

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

Rth j-a Thermal Resistance, Junction to Ambient

2.5 ℃/W

70 ℃/W

isc Website：www.iscsemi.cn

Share Link: