2N5581JX View Datasheet(PDF) - Semicoa Semiconductor
Part Name
Description
MFG CO.
2N5581JX Datasheet PDF : 2 Pages
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2N5581
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
50
Volts
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
VCB = 75 Volts
VCB = 60 Volts
VCB = 60 Volts, TA = 150°C
VEB = 6 Volts
VEB = 4 Volts
10
µA
10
nA
10
µA
10
µA
10
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 0.1 mA, VCE = 10 Volts
30
hFE2 IC = 1 mA, VCE = 10 Volts
35
hFE3 IC = 10 mA, VCE = 10 Volts
40
hFE4 IC = 150 mA, VCE = 10 Volts
40
hFE5 IC = 500 mA, VCE = 10 Volts
20
hFE6 IC = 10 mA, VCE = 10 Volts
15
TA = -55°C
VBEsat1 IC = 150 mA, IB = 15 mA
VBEsat2 IC = 500 mA, IB = 50 mA
VCEsat1 IC = 150 mA, IB = 15 mA
VCEsat2 IC = 500 mA, IB = 50 mA
120
1.2
Volts
2.0
0.3
Volts
1.0
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
2.5
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
30
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
25
pF
Switching Characteristics
Parameter
Saturated Turn-On Time
Saturated Turn-Off Time
Symbol
tON
tOFF
Test Conditions
Min
Typ
Max Units
35
ns
300
ns
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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