2N4910 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N4910

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N4910

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 40V(Min)

·Low Collector Saturatioin Voltage-

: VCE(sat)= 0.6V(Max.)@ IC= 1A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for driver circuits, switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO Collector-Base Voltage

40

VCEO Collector-Emitter Voltage

40

VEBO Emitter-Base Voltage

5

IC

Collector Current-Continuous

1

ICM

Collector Current-Peak

4

IB

Collector Current-Continuous

1

Collector Power Dissipation

PC

@ TC=25℃

25

TJ

Junction Temperature

200

Tstg

Storage Temperature Range

-65~200

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

7.0 ℃/W

isc Website：www.iscsemi.cn

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