2N5237 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
MFG CO.
2N5237 Datasheet PDF : 2 Pages
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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
2N4150 2N5237 2N5238
Ratings
Symbol 2N4150S 2N5237S2N5238S Unit
Collector-Emitter Voltage
VCEO
70
120
170 Vdc
Collector-Base Voltage
VCBO
100
150
200 Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Collector Current
IC
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2)
PT
10
Adc
1.0
5.0
W
Operating & Storage Junction Temp. Range TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
0.020
0.175
0C/mW
1) Derate linearly @ 5.7 mW/0C for TA > +250C
2) Derate linearly @ 50 mW/0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
IE = 10 µAdc
Collector-Emitter Breakdown Voltage
V(BR)EBO
IC = 0.1 Adc
2N4150, 2N4150S
2N5237, 2N5237S
V(BR)CEO
2N5238, 2N5238S
Collector-Emitter Cutoff Current
VEB = 0.5 Vdc, VCE = 60 Vdc
2N4150, 2N4150S
ICEX
VEB = 0.5 Vdc, VCE = 110 Vdc
2N5237, 2N5237S
VEB = 0.5 Vdc, VCE = 160 Vdc
2N5238, 2N5238S
Min.
7.0
70
120
170
TO- 5*
2N4150, 2N5237,
2N5238
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10
µAdc
10
10
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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