2N3013 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
2N3013 Datasheet PDF : 1 Pages
| |||
eS&mi-dontLjLctoi ZPioauata.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
2N3009
2N3013
2N3014
NPN SILICON HIGH SPEED
SWITCHING TRANSISTORS
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors
designed for high speed, medium power saturated switching applications.
MAXIMUM RAT|NGS_ (TA=*25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Col lector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Col lector Current Peak (lO^s pulse)
Power Diss i pat ion
Power Diss i pat ion (Tc=25°C)
Oper. and Storage Junction Temp.
ELECTRICAL CHARACTERISTICS (TA=25°C)
VCBO
V^ES
VCEQ
VEBQ
1^
lc
PD
PD
Tj , Tstg
2N3009
40
40
15
4.0
200
500
360
1.2
2N3013 2N3014
40
40
40
40
15
20
5.0
5-0
200
200
500
500
360
300
1.2
1.2
-65 TO +200
SYMBOL
'CES
>B
BVCBO
BVCES
BVCEO
BVEBO
VVCCEE((SSAATT))
VCE(SAT)
VCE(SAT)
IVV*BBEE((*SSAATT))*
VBE(SAT)
VBE(SAT)
nFE
hFE
hpE
hFE
hFE
cob
Cib
^on
toff
toff
TS
TEST CONDITIONS
VCE-20V
VC£-20V, VBE*0
lc-100yA
l^alOOyA
lc=10mA
IE»100VA
lc=30mA, lB=»3-OmA
lc=»100mA, lB=10mA
lr=300mA. iD^SOmA
w
0
lc=10mA, !B=1.0mA
lur=30mA,'lvRa3.0mA
lc=100mA, TB=10mA
lc=300mA, lB=30mA
lc=10mA, IB-1. OmA
VLrFL=0.4V," lUr»3"^0mA
VcE=0.4V, lc=10mA
VcE=0'5v> lr=1OOmA
VCE=1.0V, lc=100mA
VrF=1.0V, lr=300mA
VCE=10V, lc-3UmA, f-100MHz
VCB-5.0V, IE-0, f-1 40kHz
VBE="0.5, lc=0» f=l40kHz
Vcc"15v» tc=300mA» lg1-30mA
VCC=2.0V, lc=30mA, lBi=3.0mA
Vcc*15v> lc=3°0mAt 1 81s 182=3011^
Vrc=2.0V. lr=30mA, 1 B1='82=3- OmA
lra|oi=| R2a10mA
^N3009 .
MIN MAX
0.5
0.5
40
40
15
4.0
0.18
0.28
0.5
0.75 0.95
1.2
1.7
30 120
-
25
—15
350
5.0
8.0
15
2-5
-18
.2N3013
MIN MAX
0.3
0.3
40
40
15
5.0
0.18
0.28
0.5
0.75 0.95
1.2
1.7
30 120
—
25
—15
350
5.0
8.0
15
2—5
—18
2N3014
MIN MAX
0.3
0.3
40
40
20
5.0
0.18
0.35
~
0.18
0.75 0.95
1.2
0.7 0.8
30 120
25
-
25
-
350
5.0
8.0
-
16
-
25
18
UNIT
V
V
V
V
mA
mA
mW
oW,
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
NJ Senii-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to verify that datasheets are current before placing orders.
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