2N2907AD View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

MFG CO.

2N2907AD

SWITCHING TRANSISTOR PNP SILICON

Microsemi Corporation 

Electrical Characteristics @ Tj = 25 °C

Symbol

Parameter

Conditions

OFF CHARACTERISTICS

V(BR)CBO

V(BR)EBO

V(BR)CEO

ICES

ICBO1

IEBO

Breakdown Voltage, Collector to Base

Breakdown Voltage, Emitter to Base

Breakdown Voltage, Collector to Emitter

Collector to Emitter Cutoff Current

Collector to Base Cutoff Current

Emitter to Base Cutoff Current

Bias Cond. D, IC=10uAdc

Bias Cond. D, IE=10uAdc

Bias Cond. D, IC= 10mAdc, pulsed

Bias Cond. D, VCE=50Vdc

Bias Cond. D, VCB=50Vdc

Bias Cond. D, VEB= 4Vdc

Min Max Unit

60

Vdc

5

Vdc

60

Vdc

50 nAdc

10 nAdc

50 nAdc

ON CHARACTERISTICS

hFE1

hFE2

hFE3

hFE4

hFE5

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

Forward-Current Transfer Ratio

Forward-Current Transfer Ratio

Forward-Current Transfer Ratio

Forward-Current Transfer Ratio

Forward-Current Transfer Ratio

Collector to Emitter Saturation Voltage

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

VCE=10Vdc, IC=0.1mAdc

VCE=10Vdc, IC=1.0mAdc

VCE=10Vdc, IC=10mAdc

VCE=10Vdc, IC=150mAdc, pulsed

VCE=10Vdc, IC=500mAdc, pulsed

IC=150mAdc, IB=15mAdc, pulsed

IC=500mAdc, IB=50mAdc, pulsed

IC=150mAdc, IB=15mAdc, pulsed

IC=500mAdc, IB=50mAdc, pulsed

75

100 450

100

100 300

50

0.4 Vdc

1.6 Vdc

0.6 1.3 Vdc

2.6 Vdc

SMALL SIGNAL CHARACTERISTICS

hfe

/hfe/

Cobo

Cibo

Short Circuit Forward Current Xfer Ratio

Magnitude of Short Circuit Forward

Current Transfer Ratio

Output Capacitance

Input Capacitance

VCE= 10Vdc,IC =1mAdc, f= 1kHz

100

VCE= 20Vdc,IC =50mAdc, f=100MHz 2

VCB= 10Vdc, IE =0, 100kHz< f <1MHz

VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz

8 pF

30 pF

SWITCHING CHARACTERISTICS

ton

Saturated Turn-on Time

toff

Saturated Turn-off Time

As defined in 19500/291 Figure 7

As defined in 19500/291 Figure 8

45 nS

300 nS

2

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