110RIA View Datasheet(PDF) - International Rectifier
Part Name
Description
MFG CO.
110RIA Datasheet PDF : 8 Pages
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110/111RIA Series
Bulletin I25204 rev. B 09/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
110/111RIA
80
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
800
120
1200
VRSM , maximum non-
repetitive peak voltage
V
900
1300
IDRM/IRRM max.
@ TJ =mTAJ max.
20
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
110/111RIA
110
90
172
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
Units Conditions
A
°C
A
KA2s
KA2√s
180° conduction, half sine wave
DC @ 83°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
0.82
1.02
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
2.16
1.70
1.57
150
400
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, anode supply 6V resistive load
110/111RIA
300
1
110
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25Ω
2
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