2SD718 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2SD718 Datasheet PDF : 3 Pages
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UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
Ic - VCE
12
COMMON EMITTER
400
300
Tc=25°C
10
200
8
6
100
4
50
IB=20mA
2
0
0
024
6
8
10 12 14
COLLECTOR-EMITTER VOLTAGE, VCE (V)
1k
500
300
Tc=25°C
Tc=-25°C
100
50
30
hFE - Ic
COMMON EMITTER
VcE=5V
Tc=100°C
10
0.01 0.03 0.1 0.3 1
3
10
COLLECTOR CURRENT, Ic (A)
VCE(sat) - Ic
1
COMMON EMITTER
0.5 Ic/IB=10
0.3
0.1
0.05
0.03
Tc=100°C
Tc=25°C
Tc=-25°C
0.01
0.01 0.03 0.1 0.3
1
3
10
COLLECTOR CURRENT, Ic (A)
100
1
80
60
2
40
3
Pc - Ta
1 Ta=Tc
INFINITE HEAT SINK
2 300 300×2mm AI
HEAT SINK
3 200×200×2mm AI
HEAT SINK
4 100×100×2mm AI
HEAT SINK
5 NO HEAT SINK
4
20
5
0
0
40
80
120 160 200 240
AMBIENT TEMPERATURE, Ta (℃ )
SAFE OPERATING AREA
30
IC MAX(PULSED) *
IC MAX(CONTINUOUS)
10
3
DTCc=O2P5E°50R0CAmTSIO* N
t=1mS *
10mS *
100mS *
UTC
1
*SINGLE NONREPETITIVE
0.3 PULSE Tc=25°C CURVES
MUST BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
0.1
1
3
10
30
100 300
COLLECTOR-EMITTER VOLTAGE, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R214-003,A
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