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KA3S0680 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
MFG CO.
KA3S0680
Fairchild
Fairchild Semiconductor 
KA3S0680 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KA3S0680RB/KA3S0680RFB
Absolute Maximum Ratings
Characteristic
Maximum Drain voltage (1)
Drain Gate voltage (RGS=1M)
Gate source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Maximum supply voltage
Input voltage range
Total power dissipation
Symbol
VD,MAX
VDGR
VGS
IDM
EAS
ID
ID
VCC,MAX
VFB
PD (watt H/S)
Derating
Operating ambient temperature
Storage temperature
TA
TSTG
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25 °C
Value
800
800
±30
24.0
455
6.0
4.0
30
0.3 to VSD
150
1.21
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
ADC
ADC
V
V
W
W/°C
°C
°C
2

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