TK10A50D View Datasheet(PDF) - Toshiba

Part Name

Description

MFG CO.

TK10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba 

TK10A50D

rth – tw

10

1 Duty=0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

10μ

100μ

SINGLE PULSE

PDM

t

T

Duty = t/T

Rth (ch-c) = 2.78 °C/W

1m

10m

100m

1

10

PULSE WIDTH tw (s)

SAFE OPERATING AREA

100

ID max (pulsed) *

ID max (continuous)

10

1 ms *

100 μs *

1

DC operation

Tc = 25°C

0.1

*: SINGLE NONREPETITIVE

0.01

PULSE Tc = 25°C

CURVES MUST BE DERATED

LINEARLY WITH INCREASE

IN TEMPERATURE.

0.001

0.1

1

10

VDSS max

100

1000

DRAIN-SOURCE VOLTAGE VDS (V)

EAS – Tch

300

240

180

120

60

0

25

50

75

100

125

150

CHANNEL TEMPEATURE (INITIAL)

Tch(°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

TEST CIRCUIT

WAVEFORM

RG = 25 Ω

VDD = 90 V, L = 4.49 mH

ΕAS

=

1

2

⋅L ⋅I2

⋅

⎜⎛

⎜⎝

BVDSS

BVDSS − VDD

⎟⎞

⎟⎠

5

2013-11-01

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