BUZ93 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
BUZ93 Datasheet PDF : 9 Pages
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BUZ 93
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 3.3 A, VDD = 50 V
RGS = 25 Ω, L = 37 mH
240
mJ
200
EAS
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 5 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 5 10 15 20 25 30 35 nC 45
QGate
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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