STP3HNK90Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STP3HNK90Z

N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP3HNK90Z - STF3HNK90Z

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 3 A, VGS=0

ISD=3 A,

di/dt = 100A/µs,

VDD=50V, Tj=25°C

(see Figure 20)

ISD=3A,

di/dt = 100A/µs,

VDD=50V, Tj=150°C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

3

A

12 A

1.6 V

494

ns

2.4

µC

9.8

A

628

ns

3.2

µC

10.2

A

6/15

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