GB02N120 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

GB02N120

Fast S-IGBT in NPT-technology

Infineon Technologies 

Preliminary

SGP02N120

SGB02N120, SGD02N120

20V

15V

10V

UCE=960V

5V

0V

0nC

5nC

10nC

15n

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 2A)

C

iss

100pF

Coss

Crss

10pF

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

30µs

40A

25µs

30A

20µs

15µs

20A

10µs

10A

5µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 1200V, start at Tj = 25°C)

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors

8

Mar-00

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