BF421 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF421 Datasheet PDF : 6 Pages
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Philips Semiconductors
PNP high voltage transistors
Product specification
BF421; BF423
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BF421
BF423
VCEO
collector-emitter voltage
BF421
BF423
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on a printed-circuit board.
MIN. MAX. UNIT
−
−300 V
−
−250 V
−
−300 V
−
−250 V
−
−5
V
−
−50 mA
−
−100 mA
−
−50 mA
−
830 mW
−65 +150 °C
−
150 °C
−65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on a printed-circuit board.
CONDITIONS
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
VCB = −200 V; IE = 0 A
VCB = −200 V; IE = 0 A; Tj = 150 °C
VEB = −5 V; IC = 0 A
VCE = −20 V; IC = −25 mA
IC = −30 mA; IB = −5 mA
VCE = −30 V; IC = ic = 0 A; f = 1 MHz
VCE = −10 V; IC = −10 mA; f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX. UNIT
−10 nA
−10 µA
−50 nA
−
−0.6 V
1.6 pF
−
MHz
2004 Nov 10
3
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