NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
103
handbook, halfpage
RDSon
(kΩ)
102
MGE790
10
1
10−1
0
BF245A
BF245B
BF245C
−1
−2
−3
−4
VGS (V)
VDS = 0; f = 1 kHz; Tamb = 25 C.
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
3
handbook, halfpage
F
(dB)
2
1
MGE786
typ
0
1
10
102
103
f (MHz)
VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.
Input tuned to minimum noise.
Fig.21 Noise figure as a function of frequency;
typical values.
1996 Jul 30
9