NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
6
handbookI,Dhalfpage
(mA)
5
4
3
2
1
0
0
MBH555
VGS = 0 V
−0.5 V
−1 V
−1.5 V
10
VDS (V)
20
VDS = 15 V; Tj = 25 C.
Fig.4 Output characteristics for BF245A;
typical values.
15
handbook, halfpage
ID
(mA)
10
MGE787
5
0
−4
−2
VGS (V)
0
VDS = 15 V; Tj = 25 C.
Fig.5 Transfer characteristics for BF245B;
typical values.
15
handbook, halfpage
ID
(mA)
10
5
0
0
MBH553
VGS = 0 V
−0.5 V
−1 V
−1.5 V
−2 V
−2.5 V
10
VDS (V)
20
30
handbook, halfpage
ID
(mA)
20
10
0
−10
MGE788
−5
VGS (V)
0
VDS = 15 V; Tj = 25 C.
Fig.6 Output characteristics for BF245B;
typical values.
1996 Jul 30
VDS = 15 V; Tj = 25 C.
Fig.7 Transfer characteristics for BF245C;
typical values.
5