PUMB18(2009) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
PUMB18 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Max Unit
−50
V
−50
V
−7
V
+7
V
−20
V
−100 mA
−100 mA
200
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
300
mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
PEMB18_PUMB18_4
Product data sheet
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1] -
-
625 K/W
[1] [2] -
-
625 K/W
[1] -
-
416 K/W
[1] [2] -
-
416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Rev. 04 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
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