D2NK90Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

D2NK90Z

N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

Electrical ratings

STP2NK90Z - STD2NK90Z - STD2NK90Z-1

Table 4. Gate-source zener diode

Symbol

Parameter

BVGSO Gate-source breakdown voltage

Test conditions

Min. Typ. Max. Unit

Igs=± 1mA (open drain) 30

V

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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