4N60B View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

MFG CO.

4N60B

600V N-Channel MOSFET

Fairchild Semiconductor 

Typical Characteristics (Continued)

100

D = 0.5

0.2

1 0 -1

0.1

0.05

0.02

0.01

sin gle pu lse

※ N otes :

1. Z θ JC(t) = 1.25 ℃ /W M ax.

2. D uty Factor, D =t1/t2

3 . T JM - T C = P DM * Z θ JC(t)

PDM

t1

t2

1 0 -2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t1, S qu a re W ave P u lse D u ra tion [se c]

Figure 11-1. Transient Thermal Response Curve for SSP4N60B

D = 0.5

100

0.2

0.1

0.05

1 0 -1

0.02

0.01

sin gle pu lse

※ N otes :

1. Zθ

(t)

JC

=

3.79

℃ /W

M ax.

2 . D uty Fa c to r, D = t1/t2

3 . T JM - T C = P DM * Z θ JC(t)

PDM

t1

t2

1 0 -2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t1, S qu a re W ave P u lse D u ra tion [se c]

Figure 11-2. Transient Thermal Response Curve for SSS4N60B

©2002 Fairchild Semiconductor Corporation

Rev. B, June 2002

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