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M63828DP View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name
Description
MFG CO.
M63828DP Datasheet PDF : 6 Pages
1 2 3 4 5 6
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
Taiwan Assy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 40 ~ +85°C)
Symbol
Parameter
Limits
Unit
min
typ
max
VO
Output voltage
0
50
V
Collector current Duty Cycle
IC
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
WP : no more than 8%
DP : no more than 5%
Duty Cycle
WP : no more thn 30%
0
0
400
mA
200
multaneously)
DP : no more than 20%
VIH
Hinput voltage IC 400mA
5
25
V
VIL
Linput voltage
0
0.8
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE (sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
II = 500µA, IC = 350mA
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 10V
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
50
V
1.2
1.6
1.0
1.3
V
0.9
1.1
0.9
1.5 mA
1.4
2.0
V
100
µA
1000 3000
Limits
Unit
min
typ
max
30
ns
450
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VO
Measured device
RL
OPEN
PG
50
CL
OUTPUT
50%
INPUT
OUTPUT
50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50
VI = 8V
(2) Input-output conditions : RL = 25, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
50%
toff
Feb. 2003

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