HFA15PB60 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
HFA15PB60 Datasheet PDF : 7 Pages
| |||
HFA15PB60
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
IF = 15 A
-
Maximum forward voltage
VFM
IF = 30 A
See fig. 1
-
IF = 15 A, TJ = 125 °C
-
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
-
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
12
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 10
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
19
-
42
-
74
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during tb
See fig. 8
IRRM1
IRRM2
Qrr1
Qrr2
dI(rec)M/dt1
dI(rec)M/dt2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/µs
VR = 200 V
-
4.0
-
6.5
-
80
-
220
-
188
-
160
MAX.
-
60
120
6.0
10
180
600
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Tlead
RthJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and gerased
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
40
K/W
0.25
-
6.0
-
0.21
-
12
-
(10)
HFA15PB60
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93062
Revision: 30-Jul-08
Share Link: 