ST2100C32R1 View Datasheet(PDF) - International Rectifier
Part Name
Description
MFG CO.
ST2100C32R1 Datasheet PDF : 6 Pages
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Blocking
Parameter
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM
I
DRM
Max. peak reverse and off-state
leakage current
ST2100C..R
500
250
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
mA TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
PGM
PG(AV)
IGM
V
GM
-V G M
IGT
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
Maximum DC gate current
required to trigger
VGT Maximum gate voltage required
to trigger
VGD DC gate voltage not to trigger
ST2100C..R
150
10
30
30
0.25
400
4
0.25
Units Conditions
W
tp = 100µs
A Anode positive with respect to cathode
V Anode positive with respect to cathode
V Anode positive with respect to cathode
mA TC = 25°C, VDRM = 5V
V TC = 25°C, VDRM = 5V
V TC = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST2100C..R Units Conditions
TJ max. Max. operating temperature
Tstg Max. storage temperature range
RthJ-C Thermal resistance, junction
to case
Rth(C-h) Thermal resistance, case
to heatsink
F
Mounting force ± 10%
wt
Approximate weight
125
-55 to 125
0.019
0.0095
0.004
0.002
43000
(4400)
1600
On-state (conducting)
°C
K/W
K/W
N
(Kg)
g
DC operation single side cooled
DC operation double side cooled
Single side cooled Clamping force 43KN with
Double side cooled mounting compound
Case style
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units Conditions
180°
120°
0.0010
0.0017
0.0010
0.0017
K/W
T = T max.
J
J
60°
0.0044
0.0044
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