SH8M2 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
MFG CO.
SH8M2 Datasheet PDF : 4 Pages
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SH8M2
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 1.0
−
Static drain-source on-state
resistance
RDS (on)∗
−
−
Forward transfer admittance Yfs ∗ 2.0
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ∗ −
Rise time
tr ∗ −
Turn-off delay time
td (off) ∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
tf ∗ −
Qg ∗ −
Qgs ∗ −
Qgd ∗ −
Typ.
−
−
−
−
59
93
107
−
140
45
30
6
6
17
4
2.5
0.8
0.8
Max.
±10
−
1
2.5
83
130
150
−
−
−
−
−
−
−
−
3.5
−
−
Unit
Conditions
μA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 3.5A, VGS= 10V
mΩ ID= 3.5A, VGS= 4.5V
mΩ ID= 3.5A, VGS= 4V
S VDS= 10V, ID= 3.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ID= 1.75A
VGS= 10V
ns RL= 8.57Ω
ns RG=10Ω
nC VDD 15V, VGS= 5V
nC ID= 3.5A
nC RL= 4.29Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD ∗
−
− 1.2 V
∗Pulsed
Conditions
IS= 6.4A, VGS=0V
Data Sheet
www.rohm.com
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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