D45C11(2010) View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

MFG CO.

D45C11
(Rev.:2010)

PNP Current Driver Transistor

Fairchild Semiconductor 

Electrical Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0

ICES

Collector-Cutoff Current

VCE = -90V, IE = 0

IEBO

Emitter-Cutoff Current

VEB = -5.0V, IB = 0

On Characteristics

hFE

DC Current Gain

VCE (sat) Collector-Emitter Saturation Voltage

VBE (sat) Base-Emitter Saturation Voltage

Small Signal Characteristics

VCE = -1.0V, IC = -0.2A

VCE = -1.0V, IC = -1.0A

IC = -1.0A, IB = -50mA

IC = -1.0A, IB = -100mA

Cob

Output Capacitance

VCB = -10V, f = 1.0MHz

fT

Current Gain - Bandwidth Product IC = -20mA, VCE = -4.0V

Min.

-80

40

20

32

Max.

-10

-100

120

-0.5

-1.3

125

Units

V

μA

μA

V

V

pF

MHz

© 2009 Fairchild Semiconductor Corporation

D45C11 Rev. B2

2

www.fairchildsemi.com

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