MW7IC2750NR1 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

MFG CO.

MW7IC2750NR1

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 185 μAdc)

VGS(th)

1

2

3

Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ2 = 550 mA, Measured in Functional Test)

VGS(Q)

2.8

3.6

4.3

Vdc

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Stage 2 — Dynamic Characteristics (1)

VDS(on)

0.1

0.12

0.8

Vdc

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

0.68

—

pF

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

220

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz,

WiMAX Signal, 802.16d, 10 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR

measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.

Power Gain

Gps

24

26

31

dB

Power Added Efficiency

PAE

15

17

—

%

Output Peak - to - Average Ratio @ 0.01% Probability on CCDF

PAR

7.8

8.6

—

dB

Adjacent Channel Power Ratio

ACPR

—

- 49

- 45

dBc

Input Return Loss

IRL

—

- 12

- 10

dB

Typical Performances OFDM Signal — 7 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 =

160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4,

4 Bursts, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

Mask System Type G @ Pout = 8 W Avg.

Mask

dBc

Point B at 3.5 MHz Offset

—

- 27

—

Point C at 5 MHz Offset

—

- 40

—

Point D at 7.4 MHz Offset

—

- 43

—

Point E at 14 MHz Offset

—

- 58

—

Point F at 17.5 MHz Offset

—

- 63

—

Relative Constellation Error @ Pout = 8 W Avg. (2)

RCE

—

- 33

—

dB

Error Vector Magnitude (2)

EVM

—

2.3

—

% rms

(Typical EVM Performance @ Pout = 8 W Avg. with OFDM 802.16d

Signal Call)

Typical Performances OFDM Signal — 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 =

160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 10 MHz Channel Bandwidth, 64 QAM 3/4, 4

Bursts, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

Relative Constellation Error @ Pout = 8 W Avg. (1)

RCE

—

- 33

—

dB

Error Vector Magnitude (1)

EVM

—

2.3

—

% rms

(Typical EVM Performance @ Pout = 8 W Avg. with OFDM 802.16d

Signal Call)

1. Part internally matched both on input and output.

2. RCE = 20Log(EVM/100)

(continued)

RF Device Data

Freescale Semiconductor

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

3

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