MC10H145
Q0
2
DATA
OUT
BUFFER
BLOCK DIAGRAM
Q1
1
DATA
OUT
BUFFER
Q2
15
DATA
OUT
BUFFER
Q3
14
DATA
OUT
BUFFER
CS
3
CHIP
SELECT
BUFFER
10
A0
9
A1
7
A2
A3 6
SENSE SENSE SENSE SENSE
16 X 4 MEMORY
CELL ARRAY
WRITE AND
DATA IN BUFFER
5
4
11
13 WE
12
D0
D1
D2
D3
MAXIMUM RATINGS
Symbol
Characteristic
Rating
Unit
VEE
Power Supply (VCC = 0)
VI
Input Voltage (VCC = 0)
Iout
Output Current− Continuous
− Surge
−8.0 to 0
Vdc
0 to VEE
Vdc
50
mA
100
TA
Operating Temperature Range
Tstg
Storage Temperature Range− Plastic
− Ceramic
0 to +75
°C
−55 to +150
°C
−55 to +165
ELECTRICAL CHARACTERISTICS (VEE = −5.2 V ±5%) (See Note)
Symbol
Characteristic
0°
25°
75°
Unit
Min
Max
Min
Max
Min
Max
IE Power Supply Current
−
160
−
163
−
165
mA
IinH Input Current High
−
375
−
220
−
220
μA
IinL Input Current Low
0.5
−
0.5
−
0.3
−
μA
VOH High Output Voltage
−1.02 −0.84 −0.98 −0.81 −0.92
−0.735
Vdc
VOL Low Output Voltage
−1.95 −1.63 −1.95 −1.63 −1.95
−1.60
Vdc
VIH High Input Voltage
−1.17 −0.84 −1.13 −0.81 −1.07
−0.735
Vdc
VIL Low Input Voltage
−1.95 −1.48 −1.95 −1.48 −1.95
−1.45
Vdc
1. Each MECL 10H series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been
established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 Ifpm is maintained.
Outputs are terminated through a 50-ohm resistor to −2.0 volts.
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2