MMSF7P03HD View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

MMSF7P03HD

Power MOSFET 7 Amps, 30 Volts

ON Semiconductor 

MMSF7P03HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2.)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

IDSS

–

–

IGSS

–

VGS(th)

1.0

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 5.3 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

–

–

Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)

gFS

–

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 24 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS = 4.5 Vdc,

RG = 10 Ω)

td(on)

–

tr

–

td(off)

–

tf

–

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

–

tr

–

td(off)

–

tf

–

Gate Charge

(See Figure 8)

(VDS = 10 Vdc, ID = 4.9 Adc,

VGS = 6.0 Vdc)

QT

–

Q1

–

Q2

–

Q3

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

–

–

Reverse Recovery Time

trr

–

(IS = 4.9 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

–

tb

–

Reverse Recovery Stored Charge

QRR

–

2. Negative sign for P–Channel device omitted for clarity.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

–

–

µAdc

–

1.0

–

25

–

100

nAdc

Vdc

–

–

mW

26

35

42

50

12

–

Mhos

1200

1680

pF

580

810

160

220

23.5

47

ns

42.7

85.4

57.4

114.8

53.6

107.2

16

32

15.2

30.6

99.7

199.4

55.2

110.4

37.9

75.8

nC

4.2

–

11.5

–

7.6

–

0.76

1.2

Vdc

0.61

–

47.9

–

ns

27

–

21

–

0.052

–

µC

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