IRFBC30A View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

MFG CO.

IRFBC30A

Power MOSFET

Vishay Semiconductors 

IRFBC30A, SiHFBC30A

Vishay Siliconix

700

ID

TOP

1.6A

600

2.3A

BOTTOM 3.6A

500

400

300

200

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature( °C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

740

720

700

680

660

640

0.0

1.0

2.0

3.0

4.0

IAV , Avalanche Current ( A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91108

S-81243-Rev. A, 21-Jul-08

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