GLT41016 View Datasheet(PDF) - G-Link Technology

Part Name

Description

MFG CO.

GLT41016

64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-Link Technology  

G -LINK

GLT41016

64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

May 1997 (Rev 1)

TA=25GC, VCC=5VH10%, VSS=0V

Operating Temperature, TA (ambient)

Symbol

Parameter

.......................................-0GC to +70GC

Storage Temperature(plastic)....-55GC to +125GC CIN1

Address Input

Max. Unit

5 pF

Voltage Relative to VSS...............-1.0V to + 7.0V CIN2

Short Circuit Output Current......................50mA

Power Dissipation......................................1.0W COUT

RAS , LCAS , UCAS , WE , OE 7 pF

Data Input/ Output

7 pF

*Note: Operation above Absolute Maximum Ratings can *Note: Capacitance is sampled and not 100% tested

adversely affect device reliability.

Electrical Specifications

z CAS means UCAS and LCAS .

z All voltages are referenced to GND.

z After power up, wait more than 1002s and then, execute eight CAS -before- RAS or RAS -only

refresh cycles as dummy cycles to initialize internal circuit.

Block Diagram :

Extended Data Output (EDO) Page Mode

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-3-

G-Link Technology Corporation, Taiwan

2F, No.12, R&D Rd. II, Science-Based Industrial Park,

Hsin Chu, Taiwan, R.O.C.

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