GB50YF120N(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
GB50YF120N Datasheet PDF : 10 Pages
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GB50YF120N
IGBT Fourpack Module, 50 A Vishay High Power Products
1
TJ = 125°C
0.1
0.01
TJ = 25°C
0.001
400
600
800
1000
1200
VCES (V)
Fig. 11 - Typical Zero Gate Voltage Collector Current
5.5
5
TJ = 25°C
4.5
4
3.5
TJ = 125°C
3
2.5
2
0
0.2
0.4
0.6
0.8
1
IC (mA)
Fig. 12 - Typical Threshold Voltage
4.5
4
3.5
EON
3
2.5
EOFF
2
1.5
1
0.5
0
20
40
60
80
100
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 200 µH; VCE = 600 V, RG= 5 Ω; VGE = 15 V
1
tF
0.1
tdOFF
tdON
tR
0.01
0
20
40
60
80
100
IC (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 200 µH; VCE = 600 V, RG = 5 Ω; VGE = 15 V
12
10
8
125°C
6
4
25°C
2
0
0
20
40
60
80
100
dIF/ dt (A/µs)
Fig. 15 - Typical Diode IREC vs. dIF/dt
VCC = 600 V; IF = 50 A
800
700
600
500
125°C
400
300
200
25°C
100
0
0
20
40
60
80
100
dIF/ dt (A/µs)
Fig. 16 - Typical Diode trr vs. dIF/dt
VCC = 600 V; IF = 50 A
Document Number: 93653
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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