BT151-1000RT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
BT151-1000RT Datasheet PDF : 12 Pages
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NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
15
Ptot
(W)
10
5
0
0
003aab830
a = 1.57
1.9
2.2
2.8
4
conduction form
angle factor
(degrees) a
30
4
60
2.8
90
2.2
α
120
1.9
180
1.57
2
4
6
8
IT(AV) (A)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
160
ITSM
(A)
120
003aab829
80
IT
ITSM
40
tp
t
Tj initial = 25 °C max
0
1
10
102
103
n (number of cycles)
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-1000RT_1
Product data sheet
Rev. 01 — 6 August 2007
© NXP B.V. 2007. All rights reserved.
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