BAT46(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
BAT46 Datasheet PDF : 5 Pages
| |||
BAT46
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tamb
Tstg
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 100 µA (pulsed)
Leakage current2)
VR = 1.5 V
VR = 1.5 V, Tj = 60 °C
VR = 10 V
VR = 10 V, Tj = 60 °C
VR = 50 V
VR = 50 V, Tj = 60 °C
VR = 75 V
VR = 75 V, Tj = 60 °C
Forward voltage2)
IF = 0.1 mA
IF = 10 mA
IF = 250 mA
Diode capacitance
VR = 0 V, f = 1 MHz
VR = 1 V, f = 1 MHz
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
V(BR)
100
IR
IR
IR
IR
IR
IR
IR
IR
VF
VF
VF
CD
CD
Value
Unit
3001)
K/W
125
°C
- 65 to + 125
°C
- 65 to +150
°C
Typ.
Max
Unit
V
0.5
µA
5
µA
0.8
µA
7.5
µA
2
µA
15
µA
5
µA
20
µA
250
mV
450
mV
1000
mV
10
pF
6
pF
1000
100
Tj = 60 °C
10
25 °C
1
0.1
0.01
0
18546
0.2 0.4 0.6 0.8 1 1.2
VF - Forward Voltage (V)
Figure 1. Typical Instantaneous Forward Characteristics
100
10
Tj = 60 °C
1
0.1
Tj = 25 °C
0.01
0
20
40
60
80
100
18547
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
www.vishay.com
2
Document Number 85662
Rev. 1.6, 26-Feb-07
Share Link: 