ATF-10100-GP3 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-10100-GP3 Datasheet PDF : 4 Pages
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ATF-10100 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 225°C/W; TCH = 150°C
1 µm Spot Size[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4.4 mW/°C for
TCASE > 78°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-10100-GP3
50
18
ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
1.0
0.4
0.78
13
0.40
2.0
0.4
0.55
27
0.29
4.0
0.55
0.39
65
0.22
6.0
0.8
0.41
105
0.16
8.0
1.0
0.46
144
0.10
ATF-10100 Typical Performance, T A = 25°C
16
30
15
GA
2.0
12
1.5
9
1.0
6
NFO
0.5
0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
30
14
GA
1.5
1.0
12
20
10
10
MSG
|S21|2
MAG
20
MSG
|S21|2
10
MAG
0.5
NFO
0
0
10
20
30
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
0
1.0
2.0
4.0 6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
0
1.0
2.0
4.0 6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
5-20
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