C3409 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

C3409

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A

VBEsat Base-emitter saturation voltage

IC=1.5A;IB=0.3A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=4V

Product Specification

2SC3409

MIN TYP. MAX UNIT

800

V

900

V

10

V

5.0

V

1.5

V

10 μA

10 μA

15

2

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