2N4124 View Datasheet(PDF) - General Semiconductor

Part Name

Description

MFG CO.

2N4124

Small Signal Transistors (NPN)

General Semiconductor 

2N4124

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

DC Current Gain

at VCE = 1 V, IC = 2.0 mA

at VCE = 1 V, IC = 50 mA

Collector-Base Cutoff Current

at VCB = 20 V

hFE

120

–

360

hFE

–

60

–

ICBO

–

–

50

Emitter-Base Cutoff Current

at VEB = 3 V

IEBO

–

–

50

Collector Saturation Voltage

at IC = 50 mA, IB = 5 mA

Base Saturation Voltage

at IC = 50 mA, IB = 5 mA

VCESAT

–

–

0.3

VBESAT

–

–

0.95

Collector-Emitter Breakdown Voltage

at IC = 1 mA

Collector-Base Breakdown Voltage

at IC = 10 µA

V(BR)CEO

25

–

–

V(BR)CBO

30

–

–

Emitter-Base Breakdown Voltage

at IE = 10 µA

V(BR)EBO

5

–

–

Gain-Bandwidth Product

at VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

–

200

–

Collector-Base Capacitance

at VCB = 10 V, f = 1 MHz

CCBO

–

12

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

2001)

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Unit

–

–

nA

nA

V

V

V

V

V

MHz

pF

K/W

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