
Characteristics
1N5806U
Figure 5. Reverse recovery time versus dIF/dt Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
tRR(ns)
40
36
32
28
24
20
16
12
8
4
0
0
50
Tj=125 °C
IF=IF(AV)
VR=120 V
Tj=25 °C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
C(pF)
100
10
1
1
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
100
1000
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DocID15986 Rev 3