HWF1686RA View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
HWF1686RA Datasheet PDF : 3 Pages
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Features
• Output Power: P1dB=30 dBm (typ.)
• High Gain: GL=16 Db (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=45 dBm (typ.)
• Low Cost
Description
The HWF1686RA is a medium power GaAs
MESFET designed for various RF and Microwave
applications. It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
VDS[1] Drain to Source Voltage
+15V
VGS Gate to Source Voltage
-5V
ID Drain Current
IDSS
IG Gate Current
2 mA
TCH Channel Temperature
175°C
TSTG
PT[2]
Storage Temperature
Power Dissipation
-65 to +175°C
3.5 W
[1] Hexawave recommends that the quiescent
drain-source operating voltage (VDS) should not
exceed 10 Volts.
[2]Mounted on an infinite heat sink.
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Outline Dimensions
RA Package (Ceramic)
Electrical Specification at 25°C
Symbol
Parameters
Conditions
Units Min.
IDSS Saturated Drain Current
VDS=3V, VGS=0V
mA 300
VP
Pinch-off Voltage
gm
Transconductance
VDS=3V, IDS=20 mA
VDS=3V, IDS=200 mA
V
-3.5
mS
-
Rth
Thermal Resistance
Channel to Case
°C/W
-
P1dB Output Power @1dB Gain
VDS=10V
dBm 29.0
GL
PAE
IP3
Linear Power Gain
Power-added Efficiency (Pout = P1dB)
Third-order Intercept Point[3]
IDS=0.5IDSS
f=2.4 GHz
dB
15
%
-
dBm
-
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Typ.
400
-2.0
200
30
30.0
16
45
45
Max.
600
-1.5
-
40
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw All specifications are subject to change without notice.
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