MRF18085ALSR3 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

MFG CO.

MRF18085ALSR3

RF Power Field Effect Transistors

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 µAdc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 600 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)

Common–Source Amplifier Power Gain @ 85 W (2)

(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)

Drain Efficiency @ 85 W (2)

(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)

Input Return Loss @ 85 W (2)

(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)

Pout, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)

Output Mismatch Stress @ P1dB

(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz,

VSWR = 5:1, All Phase Angles at Frequency of Tests)

V(BR)DSS

65

—

—

Vdc

IDSS

—

—

10

µAdc

IGSS

—

—

1

µAdc

VGS(th)

2

—

4

Vdc

VGS(Q)

2.5

3.9

4.5

Vdc

VDS(on)

—

0.15

—

Vdc

gfs

—

6.0

—

S

Crss

—

3.6

—

pF

Gps

η

IRL

P1dB

Ψ

13.5

15

48

52

—

–12

83

90

—

dB

—

%

–9

dB

—

Watts

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch

consistency.

MRF18085A MRF18085AR3 MRF18085ALSR3

2

MOTOROLA RF DEVICE DATA

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